ARCHIVED - MRF6S20010NR1, MRF6S20010GNR1 1600-2200 MHz, 10 W, 28 V GSM, GSM EDGE Single N-CDMA 2 x W-CDMA Lateral N-Channel RF Power MOSFETs - Data Sheet

2023/04/25 作者：恩智浦

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ARCHIVED - MRF6S20010NR1, MRF6S20010GNR1 1600-2200 MHz, 10 W, 28 V GSM, GSM EDGE Single N-CDMA 2 x W-CDMA Lateral N-Channel RF Power MOSFETs - Data Sheet

MRF6S20010NR1 and MRF6S20010GNR1 are designed for Class A or Class AB general purpose applications with frequencies from 1600 to 2200 MHz. Suitable for analog and digital modulation and multipurpose

原创声明：本文为恩智浦原创内容，未经书面授权，不得以任何方式加以使用。转载合作

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