NXP<sup>®</sup> 32 W RF power GaN transistor designed for cellular base station applications covering the frequency range of 1800 to 2200 MHz.
ARCHIVED - A2G22S160-01S 1800–2200 MHz, 32 W AVG., 48 V Airfast<sup>®</sup> RF Power GaN Transistor Data Sheet
NXP<sup>®</sup> 32 W RF power GaN transistor designed for cellular base station applications covering the frequency range of 1800 to 2200 MHz.