coms振荡器相位噪声的研究

caroline11

Abstract-This paper presents a study of phase noise in two inductorless CMOS oscillators. First-order analysis of a linear
oscillatory system leads to a noise shaping function and a new definition of Q. A linear model of CMOS ring oscillators is used
to calculate their phase noise, and three phase noise phenomena, namely, additive noise, high-frequency multiplicative noise, and
low-frequency multiplicative noise, are identified and formulated. Based on the same concepts, a CMOS relaxation oscillator is also
analyzed. Issues and techniques related to simulation of noise in the time domain are described, and two prototypes fabricated in a
0.5-pm CMOS technology are used to investigate the accuracy of the theoretical predictions. Compared with the measured results, the calculated phase noise values of a 2-GHz ring oscillator and a 900-MHz relaxation oscillator at 5 MHz offset have an error of approximately 4 dB.

本文研究了双无电感CMOS振荡器的相位噪声。通过对线性振荡系统的一阶分析，得到了噪声整形函数和q的新定义。利用CMOS环形振荡器的线性模型计算其相位噪声，识别并建立了三种相位噪声现象，即加性噪声、高频乘性噪声和低频乘性噪声。在此基础上，对CMOS弛豫振荡器进行了分析。
本文介绍了时域噪声仿真的相关问题和技术，并在时域仿真系统中制作了两种样机。采用0.5 pm CMOS技术研究理论预测的准确性。与实测结果相比，2-GHz环形振荡器和900-MHz弛豫振荡器在5 MHz偏移量下的相位噪声计算值误差约为4 dB。