Inductive ESD Protection LNA

caroline11

Abstract-A novel inductive electrostatic discharge (ESD) protection methodology for narrow-band (NB) and ultra-wideband (UWB) low noise amplifiers (LNA) is presented. Spectre postlayout simulations in a TSMC 0.18µm CMOS process show that the proposed primary-secondary inductive ESD protection can handle 4kV ESD stress. The proposed UWB LNA achieves a flat gain bandwidth of 2.7 GHz to 9 GHz, a power gain of 10 dB, a minimum noise figure of 3.2 dB and a total power dissipation of 6.6 mW from a 1.2 V supply.