转载：ICSICT 国际会议短期课程培训

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ICSICT 2008 短期课程
第九届国际固态和集成电路技术会议(ICSICT 2008)将于今年10月20日～23日在北京召开。在中国的半导体领域内，这是一次最重要也是规模最大的国际会议。会议宗旨是为固态和集成电路技术的近期发展提供一个展示和讨论的国际平台，这将是国内外学者之间交流信息和了解国际、国内最新研究进展的一次很好的机会。会议内容涵盖微电子、光电子、纳电子等半导体领域的各个方面。本次会议邀请了来自Intel, IBM, TI, AMD, Samsung, Toshiba, Hitachi, NEC,
SEMATECH, Applied Materials, SMIC等各大公司的资深专家和UC Berkeley, Stanford, UCLA, Yale, Princeton, Harvard, Cambridge等著名大学的教授作特邀报告，同时并于会议报到日（10月20日/星期一）举办短期课程班：
ICSICT 2008 Short Course-1:
“通信系统的模拟/射频集成电路－设计和技术”
"Analog/RF IC - Design and Technologies for Communications"
时     间:   2008年10月20日( 9:00－17:00)
地   点：  京仪大酒店 （地图见附件）
网   址：  http://www.ime.pku.edu.cn/icsict/shortcourse/analog_rf.php
随着无线通信系统的蓬勃发展，模拟/混合信号/射频集成电路设计得到了越来越广泛的关注。为了提高国内各高校、研究院所及设计公司的射频和模拟、混合信号集成电路的设计水平，特利用此次国际会议的优越条件和资源举办了这一“模拟/混合信号/射频集成电路－设计和技术”短期课程班。此课程班将聘请相关领域的国际资深设计专家和著名学者，深入剖析相关的技术问题、介绍最新的实现方法、预测未来的发展趋势。
课程内容主要包括：
1.  Introduction and Overview
  Dawn Wang, IBM, USA
Bin Zhao, Freescale, USA
2.  Analog/RF IC Design for Wireless Transceivers）
  Foster Dai, Auburn University, USA
3.  RF Amplifier and Si-Based PA
  Donald Lie, Texas Tech University, USA
4.  Enabling Technologies for Analog and RF ICs
  Dawn Wang, IBM, USA
5.  Frequency Synthesizers and PLL
  Woogeun Rhee, Tsinghua University, China
这是一次难得的机会：亲耳聆听顶尖专家的讲授、面对面地与他们讨论关心的问题、及时把握未来的技术发展方向，掌握当今最新的科技动态，使我们的设计团队进一步增强竞争实力。相信我们联合举办的这一关于模拟/射频集成电路设计的短期课程班将会为您带来技术水平的进一步提升和提供一个了解世界最新发展动态的机会，同时为您和您的设计团队提供一个交流信息的平台。
热情欢迎有兴趣的公司、高校、科研院所报名参加此次短期课程班。
报名信息
报名费用：参加人员每人收取注册费300元（国内）。注册费包括参加课程听讲、一套课程资料、午餐，其余自理。
报名方式：请联系如下Email地址 ciewarm@163bj.com，询问注册方式。

ICSICT 2008 Short Course-2:
“静电保护”
“Electrostatic Discharge (ESD) Protection”
时间： 2008年10月20日( 9:00－17:00)
地点：  京仪大酒店 （地图见附件）
网址：http://www.ime.pku.edu.cn/icsict/shortcourse/ esd_protection.php

静电放电（ESD）是指一定量的电荷从一个物体（例如人体）转移到另一个物体上（例如芯片）的过程。这个过程可导致芯片在很短的时间内通过一个非常大的电流，从而导致芯片失效，特别是随着半导体制程的进步，集成电路内部电子组件微小化已经进展到纳米的尺寸，如此微小的电子组件在生产过程、组装过程、运送过程、测试过程中等，都可能因为环境或人员的静电放电轰击而导致损坏，从而严重影响了电路的性能。因此，在半导体工业中，如何设计片上ESD保护结构使芯片免受ESD应力，如何有效预测ESD保护器件对电路的保护效果从而降低设计成本，以及如何降低ESD保护器件和电路对电路系统特别是RF电路的影响是极其重要的。本次短期课程邀请了ESD 研究领域资深专家Juin J. Liou，Yuanzhong (Paul) Zhou，Steven Voldman前来传授ESD保护设计方面的经验。这是一次非常难得的学习机会，我们不仅可以聆听大师的教导而且可以面对面地与大师们讨论ESD设计中遇到的难题。
课程内容主要包括：
1. Time: 9:00 am to 10:00 am
Title: ESD Fundamentals
Speaker: Prof. Juin J. Liou, University of Central Florida/Zhejiang University
2. Time: 10:00 am to 12:00 pm
Title: Predicting Circuit ESD Performance Through SPICE-Type Simulation
Speaker: Dr. Yuanzhong (Paul) Zhou, Analog Devices
3. Time: 1:30 pm to 5:00 pm
Title: Electrostatic Discharge (ESD) Protection in RF Technology
Speaker: Dr. Steven Voldman, Qimonda
这是一次难得的机会：亲耳聆听顶尖专家的传授、面对面地与他们讨论关心的问题、及时把握未来的技术发展方向，提升自我，掌握当今最新的科技，与时代保持同步。
热情欢迎有兴趣的高校、研究院所、公司参加本课程！
报名信息
报名费用：参加人员每人收取注册费300元（国内）。注册费包括参加课程听讲、一套课程资料、午餐，其余自理。
报名方式：请联系如下Email地址 ciewarm@163bj.com，询问注册方式。

附件1：地图


附件2：Short Course-1报告人介绍
Dawn Wang received her B.S. and M.S. in Electronics Engineering from Tsinghua University, P.R., China, in 1985 and 1987, respectively. She also received her M. S. in Solid State Physics from Arizona State University in 1993.
Dawn has held various technical positions in Texas Instruments of Tucson, TriQuint Boston Design Center, and IBM Boston Wireless Design Center. She has over 13 years of wide range of experience in technology and product development for RF, Analog/Mixed Signal (AMS) integrated circuits. From 1995 to 1998 in Texas Instruments (then Burr-Brown), as a device engineer, she was involved with parametric tests, product yield enhancement, and test-site designs for modeling and technology development for high precision AMS products. After joining IBM Boston Design Center in 1998, she has focused on the radio frequency integrated circuit (RFIC) designs in SiGe BiCMOS and RFCMOS technologies for front-end wireless handset applications. She drove the efforts to improve the model-to-hardware correlation for RF models and design kits. She was also actively engaged with the IBM technology development team to define high performance RF devices.
From 2002 to 2005, she was with TriQuint Semiconductors, working on the design, characterization and development of SiGe and GaAs power amplifier (PA) front end module for CDMA and WCDMA applications. Currently Dawn is a senior engineer at IBM, responsible for consultation, technical support, and training of RFIC design, models, and product design kits. She is a technical leader providing the foundry solutions for worldwide sales for analog/RF and millimeter wave applications. Her current research interests include the RF reference circuit designs in advanced SiGe BiCMOS and RFCMOS technologies. Dawn has published many technical papers and holds 6 US patents in Analog and RFIC designs. She is one of the honoree in the 11th National Woman of Color Technology Award as Technology All-Star for 2006. She is a member in Wireless Working Group of the International Technology Roadmap of Semiconductors (ITRS) & a member in ICSICT program committee.

Bin Zhao received the B.S.E.E. degree from Tsinghua University, Beijing, China, in 1985, and the M.S. and the Ph.D. degrees from the California Institute of Technology, Pasadena, CA, in 1988 and 1993, respectively.
He has been with SEMATECH, Austin, TX, Rockwell International Corporation, Newport Beach, CA, Conexant Systems, Newport Beach, CA, Skyworks Solutions, Irvine, CA, and Freescale Semiconductor, Irvine, CA. His past work and experience have been involved with both VLSI technology development and analog/mixed-signal/RF IC design. In 1997, he fabricated the industry first Cu/low-k (k