KIT33887EKEVBE评估板

ladou

KIT33887EKEVBE评估板采用MC33887单片电源IC，包括控制逻辑，电荷泵，门驱动器，以及低的RDS（on）MOSFET。It is designed to drive inductive loads with RMS currents up to 5.2 A, in both directions. In addition, the current drive can be pulse width modulated (PWM) at frequencies up to 20 kHz. An internal current mirror circuit provides a proportional (1/375 th ) sample of the output current, which may be used to provide feedback or load information to a microcontroller's A/D input.
特性：

       

• Fully specified operation 5.0 V to 28 V       
  
• Limited operation with reduced performance up to 40 V       
  
• 120 mΩ RDS(ON) typical H-Bridge MOSFETs       
  
• TTL/CMOS compatible inputs       
  
• PWM frequencies up to 10 kHz       
  
• Active current limiting (regulation)       
  
• Fault status reporting       
  
• Sleep mode with current draw ≤50 μA (inputs floating or set to match default logic states)